A semiconductor memory device includes first and second memory groups that each comprise memory cells and redundancy memory cells; first main page buffers assigned to the first memory group and second main page buffers assigned to the second memory group; first main page buffers and a first redundancy page buffer coupled between the first memory group and first internal data lines and configured to store data for the program or read operation of the memory cells and the redundancy memory cells; and a data transfer circuit configured to transfer data from a first main page buffer of the first main page buffers that corresponds to the defective column of the first memory group to the at least one second redundancy page buffer before the program operation and transfer data of the at least one second redundancy page buffer to the first main page buffer.