Invention Grant
- Patent Title: Triggered sense amplifier
- Patent Title (中): 触发读出放大器
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Application No.: US12976520Application Date: 2010-12-22
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Publication No.: US08477549B1Publication Date: 2013-07-02
- Inventor: Rohith Sood , Zheng Chen , Loren McLaury
- Applicant: Rohith Sood , Zheng Chen , Loren McLaury
- Applicant Address: US OR Hillsboro
- Assignee: Lattice Semiconductor Corporation
- Current Assignee: Lattice Semiconductor Corporation
- Current Assignee Address: US OR Hillsboro
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Techniques are provided which may be used to reduce power consumed by memory circuits. In one example, a programmable logic device (PLD) includes a plurality of static random access memory (SRAM) cells adapted to configure the PLD for an intended use. A pair of bitlines are connected to the SRAM cells. At least one of the SRAM cells is adapted to provide data signals to the bitlines in response to a wordline signal received by the one of the SRAM cells during a read operation. A sense amplifier is connected to the bitlines and adapted to detect a data value from the data signals in response to a trigger signal received by the sense amplifier during the read operation. Logic is adapted to delay the trigger signal relative to the wordline signal to permit the data signals to settle before the sense amplifier detects the data value.
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