A sensing circuit for use in a semiconductor memory device includes first and second conducting lines for conducting a bit signal to and from a memory cell. The circuit further includes a sense amplifier coupled to the first and second conducting lines for sensing a bit signal, a charge storing element for generating a predefined potential, and first and second switching element respectively coupled to the first and second conducting lines. The first and second switching elements are selectively controllable to connect the first and second conducting line to the charge storing element so as to induce the generated predefined voltage on the first or second conducting lines.