Invention Grant
- Patent Title: Semiconductor laser diode device and method of fabrication thereof
- Patent Title (中): 半导体激光二极管装置及其制造方法
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Application No.: US12951820Application Date: 2010-11-22
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Publication No.: US08477819B2Publication Date: 2013-07-02
- Inventor: Shotaro Kitamura
- Applicant: Shotaro Kitamura
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2009-275260 20091203
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
Disclosed is a distributed feedback semiconductor laser diode device capable of operating at a high output ratio of forward/backward optical power while ensuring satisfactory stability of single-mode oscillation. The distributed feedback semiconductor laser diode device is configured to include a diffraction grating formed in an optical waveguide thereof. In a partial region of the optical waveguide, there is formed an alternately repetitive pattern of a grating part possessing a distributive refractivity characteristic and a no-grating space part possessing a uniform refractivity characteristic. The no-grating space part possessing a uniform refractivity characteristic has an optical path length that is half an integral multiple of a wavelength of laser oscillation, and the grating part possessing a distributive refractivity characteristic includes at least five grating periods.
Public/Granted literature
- US20110134955A1 SEMICONDUCTOR LASER DIODE DEVICE AND METHOD OF FABRICATION THEREOF Public/Granted day:2011-06-09
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