Invention Grant
- Patent Title: Methods for wafer level trimming of acoustically coupled resonator filter
- Patent Title (中): 声耦合谐振滤波器的晶片级微调方法
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Application No.: US12777842Application Date: 2010-05-11
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Publication No.: US08479363B2Publication Date: 2013-07-09
- Inventor: Hao Zhang
- Applicant: Hao Zhang
- Agency: Morris Manning & Martin LLP
- Agent Tim Tingkang Xia, Esq.
- Main IPC: H01L41/22
- IPC: H01L41/22 ; H01L41/00 ; H04R17/00 ; H02N2/00

Abstract:
A method of manufacturing an acoustically coupled device including a stack having a first resonator, a second resonator and a decoupler, the decoupler formed between the first and second resonators, and each resonator having a piezoelectric layer sandwiched between a bottom electrode and a top electrode, includes providing a substrate having a first sacrificial layer formed in or on a selected portion of the substrate, forming the first resonator of a first stack over the sacrificial layer on the selected portion of the substrate and the first resonator of a second stack on the substrate, respectively, such that the first resonators of the first and second stacks are distanced, forming a gap underlying the second stack, performing a measurement on the second stack, trimming the top electrode of the first resonator of the first stack, and forming the second resonator over each of the first and second stacks, respectively.
Public/Granted literature
- US20110277286A1 METHODS FOR WAFER LEVEL TRIMMING OF ACOUSTICALLY COUPLED RESONATOR FILTER Public/Granted day:2011-11-17
Information query
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