Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13236229Application Date: 2011-09-19
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Publication No.: US08480915B2Publication Date: 2013-07-09
- Inventor: Gaku Minamihaba , Yukiteru Matsui
- Applicant: Gaku Minamihaba , Yukiteru Matsui
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: JP2011-085443 20110407
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00

Abstract:
According to one embodiment, the method of manufacturing a semiconductor device includes contacting a film formed on a semiconductor substrate with a rotating polishing pad which is supported on a turntable, and feeding polishing foam to a region of the polishing pad with which the film is contacted, thereby polishing the film. The polishing foam is obtained by turning the aqueous dispersion into a foamy body. The aqueous dispersion includes 0.01-20% by mass of abrasive grain and 0.01-1% by mass of foam forming and retaining agent, all based on a total mass of the aqueous dispersion.
Public/Granted literature
- US20120258597A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-10-11
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