Invention Grant
- Patent Title: Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method
- Patent Title (中): 化学机械抛光水性分散体,其制备方法,化学机械抛光水分散体制备试剂盒和化学机械抛光方法
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Application No.: US12749934Application Date: 2010-03-30
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Publication No.: US08480920B2Publication Date: 2013-07-09
- Inventor: Hirotaka Shida , Akihiro Takemura , Taichi Abe
- Applicant: Hirotaka Shida , Akihiro Takemura , Taichi Abe
- Applicant Address: JP Tokyo
- Assignee: JSR Corporation
- Current Assignee: JSR Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-89885 20090402; JP2009-89886 20090402; JP2009-89887 20090402
- Main IPC: C09G1/02
- IPC: C09G1/02 ; H01L21/3212

Abstract:
A chemical mechanical polishing aqueous dispersion that is used to polish a polishing target that includes a wiring layer that contains tungsten, the chemical mechanical polishing aqueous dispersion including: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica having an average particle diameter calculated from a specific surface area determined by the BET method of 10 to 60 nm, the content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MC) (mass %) of the colloidal silica (C) satisfying the relationship “MA/MC=0.0001 to 0.003”, and the chemical mechanical polishing aqueous dispersion having a pH of 1 to 3.
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