Invention Grant
- Patent Title: Method of forming a patterned layer of a material on a substrate
- Patent Title (中): 在衬底上形成材料的图案化层的方法
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Application No.: US13015299Application Date: 2011-01-27
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Publication No.: US08480942B2Publication Date: 2013-07-09
- Inventor: Mark A Shannon , Junghoon Yeom
- Applicant: Mark A Shannon , Junghoon Yeom
- Applicant Address: US IL Urbana
- Assignee: The Board of Trustees of the University of Illinois
- Current Assignee: The Board of Trustees of the University of Illinois
- Current Assignee Address: US IL Urbana
- Agency: Brinks Hofer Gilson & Lione
- Main IPC: B32B38/10
- IPC: B32B38/10

Abstract:
A method of forming a patterned layer of a material on a substrate includes forming a layer of the material on a stamp, and contacting the stamp with a first substrate comprising a pattern of protruding and recessed features to bring a first portion of the layer into conformal contact with the protruding features. The stamp is then removed from the first substrate. The first portion of the layer remains in conformal contact with the protruding features, and a second portion of the layer opposite the recessed features is removed with the stamp. Accordingly, a patterned layer is formed on the stamp inverse to the pattern on the first substrate. The method may further include transferring the patterned layer on the stamp to a second substrate.
Public/Granted literature
- US20110210468A1 METHOD OF FORMING A PATTERNED LAYER OF A MATERIAL ON A SUBSTRATE Public/Granted day:2011-09-01
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