Invention Grant
- Patent Title: High-purity tellurium dioxide single crystal and manufacturing method thereof
- Patent Title (中): 高纯二氧化碲单晶及其制备方法
-
Application No.: US13262209Application Date: 2010-04-02
-
Publication No.: US08480996B2Publication Date: 2013-07-09
- Inventor: Zengwei Ge , Yong Zhu , Guoging Wu , Xueji Yin , Linyao Tang , Hanbin Zhao , Lizhen Gu
- Applicant: Zengwei Ge , Yong Zhu , Guoging Wu , Xueji Yin , Linyao Tang , Hanbin Zhao , Lizhen Gu
- Applicant Address: CN CN
- Assignee: Research and Development Center, Shanghai Institute of Ceramics,Shanghai Institute of Ceramics, Chinese Academy of Sciences
- Current Assignee: Research and Development Center, Shanghai Institute of Ceramics,Shanghai Institute of Ceramics, Chinese Academy of Sciences
- Current Assignee Address: CN CN
- Agency: Bozicevic, Field & Francis LLP
- Agent Bret E. Field
- Priority: CN200910048849 20090403
- International Application: PCT/CN2010/071525 WO 20100402
- International Announcement: WO2010/111965 WO 20101007
- Main IPC: C01B19/04
- IPC: C01B19/04 ; C30B11/02 ; C30B15/00
Abstract:
A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10−13 g/g.
Public/Granted literature
- US20120070366A1 High-Purity Tellurium Dioxide Single Crystal and Manufacturing Method Thereof Public/Granted day:2012-03-22
Information query
