Invention Grant
US08481106B2 High-dielectric constant thin film metal oxides on silicon wafers for capacitor applications and methods of manufacture
有权
用于电容器应用的硅晶片上的高介电常数薄膜金属氧化物和制造方法
- Patent Title: High-dielectric constant thin film metal oxides on silicon wafers for capacitor applications and methods of manufacture
- Patent Title (中): 用于电容器应用的硅晶片上的高介电常数薄膜金属氧化物和制造方法
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Application No.: US12043309Application Date: 2008-03-06
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Publication No.: US08481106B2Publication Date: 2013-07-09
- Inventor: Shyama P. Mukherjee , Mark L. F. Phillips , Travis P. S. Thoms
- Applicant: Shyama P. Mukherjee , Mark L. F. Phillips , Travis P. S. Thoms
- Applicant Address: US NM Albuquerque
- Assignee: SBA Materials, Inc.
- Current Assignee: SBA Materials, Inc.
- Current Assignee Address: US NM Albuquerque
- Agency: Berliner & Associates
- Main IPC: B05D5/12
- IPC: B05D5/12 ; B05D3/00 ; C23C14/02 ; H01G7/00
Abstract:
A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.
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