Invention Grant
- Patent Title: Magnetic memory and manufacturing method thereof
- Patent Title (中): 磁记忆及其制造方法
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Application No.: US13360599Application Date: 2012-01-27
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Publication No.: US08481339B2Publication Date: 2013-07-09
- Inventor: Kiyokazu Nagahara , Eiji Kariyada
- Applicant: Kiyokazu Nagahara , Eiji Kariyada
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2011-035757 20110222
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A magnetic memory has a magnetic recording layer, a reference layer connected via a non-magnetic layer to the magnetic recording layer, first and second magnetization pinning layers disposed below the magnetic recording layer. The magnetic recording layer and the reference layer have a perpendicular magnetic anisotropy. The magnetic recording layer has a magnetization reversal region having a reversible magnetization and overlapping the difference layer, a first magnetization pinned region connected to a first boundary of the magnetization reversal region with the direction of the magnetization being fixed in a first direction, and a second magnetization pinned region connected to a second boundary of the magnetization reversal region with the direction of magnetization being fixed in a second direction anti-parallel to the first direction. The first and the second magnetization pinning layers fix the magnetization of the first and the second magnetization pinned regions.
Public/Granted literature
- US20120211811A1 MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-08-23
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