Invention Grant
- Patent Title: Method for preparing a light-emitting device using gas cluster ion beam processing
- Patent Title (中): 使用气体簇离子束处理制备发光器件的方法
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Application No.: US13074618Application Date: 2011-03-29
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Publication No.: US08481340B2Publication Date: 2013-07-09
- Inventor: John J. Hautala
- Applicant: John J. Hautala
- Applicant Address: US MA Billerica
- Assignee: TEL Epion Inc.
- Current Assignee: TEL Epion Inc.
- Current Assignee Address: US MA Billerica
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of manufacturing semiconductor-based light-emitting devices, such as light-emitting diodes (LEDs), is described. The method comprises irradiating an interface region with a gas cluster ion beam (GCIB) to improve the interface region between a light-emitting device stack and the substrate, within the light-emitting device stack, and/or between the light-emitting device stack and a metal contact layer in an end-type contact.
Public/Granted literature
- US20110312106A1 METHOD FOR PREPARING A LIGHT-EMITTING DEVICE USING GAS CLUSTER ION BEAM PROCESSING Public/Granted day:2011-12-22
Information query
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