Invention Grant
US08481341B2 Epitaxial film growth in retrograde wells for semiconductor devices
有权
用于半导体器件的逆行井中的外延膜生长
- Patent Title: Epitaxial film growth in retrograde wells for semiconductor devices
- Patent Title (中): 用于半导体器件的逆行井中的外延膜生长
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Application No.: US13487878Application Date: 2012-06-04
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Publication No.: US08481341B2Publication Date: 2013-07-09
- Inventor: Robert D. Clark
- Applicant: Robert D. Clark
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/66 ; H01L21/20 ; H01L21/36
Abstract:
A method of fabricating a semiconductor device. A substrate is provided and includes a dielectric layer and a mask layer, which is patterned and developed. A plurality of trenches is created within the dielectric material by a retrograde etching process. The plurality of trenches is subsequently overfilled with a material by heteroepitaxial growth with aspect ratio trapping. The material includes at least one of germanium, a Group III-V compound, or a combination of two or more thereof. The overfilled plurality of trenches is then planarized.
Public/Granted literature
- US20130115721A1 EPITAXIAL FILM GROWTH IN RETROGRADE WELLS FOR SEMICONDUCTOR DEVICES Public/Granted day:2013-05-09
Information query
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