Invention Grant
- Patent Title: Method of manufacturing semiconductor device, semiconductor device and semiconductor composite device
- Patent Title (中): 制造半导体器件，半导体器件和半导体复合器件的方法
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Application No.: US12730826Application Date: 2010-03-24
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Publication No.: US08481342B2Publication Date: 2013-07-09
- Inventor: Mitsuhiko Ogihara , Tomohiko Sagimori , Takahito Suzuki , Masataka Muto
- Applicant: Mitsuhiko Ogihara , Tomohiko Sagimori , Takahito Suzuki , Masataka Muto
- Applicant Address: JP Tokyo
- Assignee: Oki Data Corporation
- Current Assignee: Oki Data Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mots Law, PLLC
- Agent Marvin A. Motsenbocker
- Priority: JP2009-084099 20090331
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A method for manufacturing a semiconductor device, includes: a step of etching a Si (111) substrate along a (111) plane of the Si (111) substrate to separate a Si (111) thin-film device having a separated surface along the (111) plane.
Public/Granted literature
- US20100244054A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPOSITE DEVICE Public/Granted day:2010-09-30
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