Invention Grant
- Patent Title: Method of analyzing iron concentration of boron-doped P-type silicon wafer and method of manufacturing silicon wafer
- Patent Title (中): 分析硼掺杂P型硅晶片的铁浓度的方法和制造硅晶片的方法
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Application No.: US13191740Application Date: 2011-07-27
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Publication No.: US08481346B2Publication Date: 2013-07-09
- Inventor: Ryuji Ohno , Hisao Iga
- Applicant: Ryuji Ohno , Fumio Iga
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2010-190398 20100827
- Main IPC: H01L21/66
- IPC: H01L21/66
Abstract:
An aspect of the present invention relates to a method of analyzing an iron concentration of a boron-doped p-type silicon wafer by a SPV method, which comprises subjecting the wafer to Fe—B pair separation processing by irradiation with light and determining the iron concentration based on a change in a minority carrier diffusion length following the separation processing. The iron concentration is calculated with a calculation equation comprising a minority carrier diffusion length LAF1 measured after the separation processing, a minority carrier diffusion length LAF2 measured after a prescribed time has elapsed following measurement of LAF1, and dependence on time of recombination of Fe—B pairs separated by the separation processing. The calculation equation is derived by assuming that the irradiation with light causes boron atoms and oxygen atoms in the wafer to form a bonded product, and by assuming that the bonded product has identical influences on LAF1 and LAF2.
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