Invention Grant
- Patent Title: Semiconductor device and manufacturing method therefor
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13094668Application Date: 2011-04-26
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Publication No.: US08481366B2Publication Date: 2013-07-09
- Inventor: Masahiko Harayama , Kouichi Meguro , Junichi Kasai
- Applicant: Masahiko Harayama , Kouichi Meguro , Junichi Kasai
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Priority: JP2007-254537 20070928
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A semiconductor device is provided that includes a semiconductor chip and a resin section that molds the semiconductor chip and has a first through-hole. A through electrode that is electrically coupled to the semiconductor chip, extends through the resin section, and extends between a top edge and a bottom edge of an inner surface of the first through-hole. A cavity which extends between planes corresponding to an upper surface and a lower surface of the resin section is formed inside the first through-hole.
Public/Granted literature
- US20110201152A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2011-08-18
Information query
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