Invention Grant
US08481368B2 Semiconductor package of a flipped MOSFET and its manufacturing method
有权
一种倒装MOSFET的半导体封装及其制造方法
- Patent Title: Semiconductor package of a flipped MOSFET and its manufacturing method
- Patent Title (中): 一种倒装MOSFET的半导体封装及其制造方法
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Application No.: US13092059Application Date: 2011-04-21
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Publication No.: US08481368B2Publication Date: 2013-07-09
- Inventor: Yan Xun Xue , Yueh-Se Ho , Hamza Yilmaz , Jun Lu
- Applicant: Yan Xun Xue , Yueh-Se Ho , Hamza Yilmaz , Jun Lu
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha & Omega Semiconductor, Inc.
- Current Assignee: Alpha & Omega Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: CH Emily LLC
- Agent Chein-Hwa Tsao
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
The invention relates to a semiconductor package of a flip chip and a method for making the semiconductor package. The semiconductor chip comprises a metal-oxide-semiconductor field effect transistor. On a die paddle including a first base, a second base and a third base, half-etching or punching is performed on the top surfaces of the first base and the second base to obtain plurality of grooves that divide the top surface of the first base into a plurality of areas comprising multiple first connecting areas, and divide the top surface of the second base into a plurality of areas comprising at least a second connecting area. The semiconductor chip is connected to the die paddle at the first connecting areas and the second connecting area.
Public/Granted literature
- US20110193208A1 SEMICONDUCTOR PACKAGE OF A FLIPPED MOSFET AND ITS MANUFACTURING METHOD Public/Granted day:2011-08-11
Information query
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