Invention Grant
- Patent Title: Nanocrystal memories and methods of forming the same
- Patent Title (中): 纳米晶体记忆及其形成方法
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Application No.: US12757812Application Date: 2010-04-09
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Publication No.: US08481386B2Publication Date: 2013-07-09
- Inventor: Jianlin Liu , Dengtao Zhao , Yan Zhu , Ruigang Li , Bei Li
- Applicant: Jianlin Liu , Dengtao Zhao , Yan Zhu , Ruigang Li , Bei Li
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
In one embodiment, a memory device includes a substrate, a tunneling oxide, a silicide nanocrystal floating gate, and a control oxide. The tunneling oxide is positioned upon a first surface of the substrate, the silicide nanocrystal floating gate is positioned upon the tunneling oxide, and the control oxide positioned upon the nanocrystal floating gate.
Public/Granted literature
- US20100258851A1 NANOCRYSTAL MEMORIES AND METHODS OF FORMING THE SAME Public/Granted day:2010-10-14
Information query
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