Component having a through-contact

Invention Grant

US08481401B2 Component having a through-contact 有权

Title translation: 具有通过接触的部件

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Patent Title: Component having a through-contact
Patent Title (中): 具有通过接触的部件
Application No.: US13134075

Application Date: 2011-05-26
Publication No.: US08481401B2

Publication Date: 2013-07-09
Inventor: Jochen Reinmuth
Applicant: Jochen Reinmuth
Applicant Address: DE Stuttgart
Assignee: Robert Bosch GmbH
Current Assignee: Robert Bosch GmbH
Current Assignee Address: DE Stuttgart
Agency: Kenyon & Kenyon LLP
Priority: DE102010029760 20100607
Main IPC: H01L21/311
IPC: H01L21/311 ; H01L21/44 ; H01L21/461 ; H01L21/4763

Abstract:

A method for manufacturing a component having a through-contact includes: providing a substrate; forming an insulating layer on the substrate; structuring the insulating layer, the insulating layer being removed at least in a predetermined trenching area surrounding a selected substrate area; performing an etching process in which the structured insulating layer functions as a mask to remove substrate material in the trenching area and to create a trench structure surrounding the selected substrate area; and forming a metallic layer on the insulating layer, the metallic layer sealing the trench structure.

Abstract(Chinese):

一种具有贯通接触部件的制造方法包括：提供基板; 在所述基板上形成绝缘层; 构造绝缘层，绝缘层至少在围绕所选择的衬底区域的预定的沟槽区域中被去除; 执行蚀刻工艺，其中结构化绝缘层用作掩模以去除在沟槽区域中的衬底材料并且产生围绕所选择的衬底区域的沟槽结构; 以及在所述绝缘层上形成金属层，所述金属层密封所述沟槽结构。

Public/Granted literature

US20110298140A1 Component having a through-contact Public/Granted day:2011-12-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀