Invention Grant
US08481404B2 Leakage control in field effect transistors based on an implantation species introduced locally at the STI edge
有权
基于在STI边缘局部引入的注入种类的场效应晶体管中的泄漏控制
- Patent Title: Leakage control in field effect transistors based on an implantation species introduced locally at the STI edge
- Patent Title (中): 基于在STI边缘局部引入的注入种类的场效应晶体管中的泄漏控制
-
Application No.: US12838810Application Date: 2010-07-19
-
Publication No.: US08481404B2Publication Date: 2013-07-09
- Inventor: Thorsten Kammler , Maciej Wiatr , Roman Boschke , Peter Javorka
- Applicant: Thorsten Kammler , Maciej Wiatr , Roman Boschke , Peter Javorka
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102009035409 20090731
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
In a static memory cell, the failure rate upon forming contact elements connecting an active region with a gate electrode structure formed above an isolation region may be significantly reduced by incorporating an implantation species at a tip portion of the active region through a sidewall of the isolation trench prior to filling the same with an insulating material. The implantation species may represent a P-type dopant species and/or an inert species for significantly modifying the material characteristics at the tip portion of the active region.
Public/Granted literature
Information query
IPC分类:
