Invention Grant
US08481406B2 Methods of forming bonded semiconductor structures 有权
形成键合半导体结构的方法

  • Patent Title: Methods of forming bonded semiconductor structures
  • Patent Title (中): 形成键合半导体结构的方法
  • Application No.: US12837326
    Application Date: 2010-07-15
  • Publication No.: US08481406B2
    Publication Date: 2013-07-09
  • Inventor: Mariam SadakaIonut Radu
  • Applicant: Mariam SadakaIonut Radu
  • Applicant Address: FR Bernin
  • Assignee: Soitec
  • Current Assignee: Soitec
  • Current Assignee Address: FR Bernin
  • Agency: TraskBritt
  • Main IPC: H01L21/30
  • IPC: H01L21/30
Methods of forming bonded semiconductor structures
Abstract:
Methods of forming bonded semiconductor structures include temporarily, directly bonding together semiconductor structures, thinning at least one of the semiconductor structures, and subsequently permanently bonding the thinned semiconductor structure to another semiconductor structure. The temporary, direct bond may be established without the use of an adhesive. Bonded semiconductor structures are fabricated in accordance with such methods.
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