Invention Grant
- Patent Title: Methods of forming bonded semiconductor structures
- Patent Title (中): 形成键合半导体结构的方法
-
Application No.: US12837326Application Date: 2010-07-15
-
Publication No.: US08481406B2Publication Date: 2013-07-09
- Inventor: Mariam Sadaka , Ionut Radu
- Applicant: Mariam Sadaka , Ionut Radu
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
Methods of forming bonded semiconductor structures include temporarily, directly bonding together semiconductor structures, thinning at least one of the semiconductor structures, and subsequently permanently bonding the thinned semiconductor structure to another semiconductor structure. The temporary, direct bond may be established without the use of an adhesive. Bonded semiconductor structures are fabricated in accordance with such methods.
Public/Granted literature
- US20120013012A1 METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES, AND SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS Public/Granted day:2012-01-19
Information query
IPC分类: