Invention Grant
US08481409B2 Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate
有权
一种用于堆叠结构的制造方法,包括与目标基底结合的薄层
- Patent Title: Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate
- Patent Title (中): 一种用于堆叠结构的制造方法,包括与目标基底结合的薄层
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Application No.: US11233785Application Date: 2005-09-23
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Publication No.: US08481409B2Publication Date: 2013-07-09
- Inventor: Hubert Moriceau , Bernard Aspar , Eric Jalaguier , Fabrice Letertre
- Applicant: Hubert Moriceau , Bernard Aspar , Eric Jalaguier , Fabrice Letertre
- Applicant Address: FR
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR
- Agency: Hayes Soloway P.C.
- Priority: FR0014170 20001106
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
The invention relates to a process for manufacturing a stacked structure comprising at least one thin layer bonding to a target substrate, comprising the following steps: a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face, b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate, c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face, d) putting a face of the target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support, e) removal of at least part of the intermediate support in order to obtain the said stacked structure.
Public/Granted literature
- US20060079071A1 Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate Public/Granted day:2006-04-13
Information query
IPC分类: