Invention Grant
- Patent Title: Incorporating impurities using a discontinuous mask
- Patent Title (中): 使用不连续掩模掺入杂质
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Application No.: US13083155Application Date: 2011-04-08
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Publication No.: US08481414B2Publication Date: 2013-07-09
- Inventor: Jaydeb Goswami
- Applicant: Jaydeb Goswami
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: H01L21/22
- IPC: H01L21/22
Abstract:
Methods of incorporating impurities into materials can be useful in non-volatile memory devices as well as other integrated circuit devices. Various embodiments provide for incorporating impurities into a material using a discontinuous mask.
Public/Granted literature
- US20120258585A1 INCORPORATING IMPURITIES USING A DISCONTINUOUS MASK Public/Granted day:2012-10-11
Information query
IPC分类:
