Invention Grant
US08481415B2 Self-aligned contact combined with a replacement metal gate/high-K gate dielectric
有权
自对准触点与替代金属栅极/高K栅极电介质组合
- Patent Title: Self-aligned contact combined with a replacement metal gate/high-K gate dielectric
- Patent Title (中): 自对准触点与替代金属栅极/高K栅极电介质组合
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Application No.: US12958608Application Date: 2010-12-02
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Publication No.: US08481415B2Publication Date: 2013-07-09
- Inventor: Jun Yuan , Dechao Guo , Kwong Hon Wong , Yanfeng Wang , Gan Wang
- Applicant: Jun Yuan , Dechao Guo , Kwong Hon Wong , Yanfeng Wang , Gan Wang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Joseph P. Abate, Esq.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of forming a semiconductor device is provided that includes forming a replacement gate structure on portion a substrate, wherein source regions and drain regions are formed on opposing sides of the portion of the substrate that the replacement gate structure is formed on. An intralevel dielectric is formed on the substrate having an upper surface that is coplanar with an upper surface of the replacement gate structure. The replacement gate structure is removed to provide an opening to an exposed portion of the substrate. A high-k dielectric spacer is formed on sidewalls of the opening, and a gate dielectric is formed on the exposed portion of the substrate. Contacts are formed through the intralevel dielectric layer to at least one of the source region and the drain region, wherein the etch that provides the opening for the contacts is selective to the high-k dielectric spacer and the high-k dielectric capping layer.
Public/Granted literature
- US20120139062A1 SELF-ALIGNED CONTACT COMBINED WITH A REPLACEMENT METAL GATE/HIGH-K GATE DIELECTRIC Public/Granted day:2012-06-07
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