Invention Grant
US08481419B2 Method for producing a metal contact on a coated semiconductor substrate
失效
在涂覆的半导体衬底上制造金属接触的方法
- Patent Title: Method for producing a metal contact on a coated semiconductor substrate
- Patent Title (中): 在涂覆的半导体衬底上制造金属接触的方法
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Application No.: US13125815Application Date: 2009-11-26
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Publication No.: US08481419B2Publication Date: 2013-07-09
- Inventor: Jorg Horzel , Gunnar Schubert , Stefan Dauwe , Peter Roth , Tobias Droste , Wilfried Schmidt , Ingrid Ernst
- Applicant: Jorg Horzel , Gunnar Schubert , Stefan Dauwe , Peter Roth , Tobias Droste , Wilfried Schmidt , Ingrid Ernst
- Applicant Address: DE Mainz
- Assignee: SHOTT Solar AG
- Current Assignee: SHOTT Solar AG
- Current Assignee Address: DE Mainz
- Agency: Ladas & Parry, LLP
- Priority: DE102008037613 20081128
- International Application: PCT/EP2009/065868 WO 20091126
- International Announcement: WO2010/060944 WO 20100603
- Main IPC: H01L21/4763
- IPC: H01L21/4763

Abstract:
A method for producing an electrically conducting metal contact on a semiconductor component having a coating on the surface of a semiconductor substrate. In order to keep transfer resistances low while maintaining good mechanical strength, the invention proposes applying a particle-containing fluid onto the coating, where the particles contain at least metal particles and glass frits, curing the fluid while simultaneously forming metal areas in the substrate through heat treatment, removing the cured fluid and the areas of the coating covered by the fluid, and depositing, for the purposes of forming the contact without using intermediate layers, electrically conducting material from a solution onto areas of the semiconductor component in which the coating is removed while at the same time conductively connecting the metal areas present in said areas on the substrate.
Public/Granted literature
- US20110201196A1 METHOD FOR PRODUCING A METAL CONTACT ON A SEMICONDUCTOR SUBSTRATE PROVIDED WITH A COATING Public/Granted day:2011-08-18
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