Invention Grant
- Patent Title: Method of forming pattern structure and method of fabricating semiconductor device using the same
- Patent Title (中): 形成图案结构的方法和使用其制造半导体器件的方法
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Application No.: US13029449Application Date: 2011-02-17
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Publication No.: US08481426B2Publication Date: 2013-07-09
- Inventor: Jung-In Kim , Jaehee Oh , Kiseok Suh
- Applicant: Jung-In Kim , Jaehee Oh , Kiseok Suh
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0015302 20100219
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/461 ; H01L21/302 ; H01L21/311 ; H01L21/469
Abstract:
A method of forming a pattern structure and a method of fabricating a semiconductor device using the pattern structure, are provided the method of forming the pattern structure includes forming a mask on an underlying layer formed on a lower layer. The underlying layer is etched using the mask as an etching mask, thereby forming patterns on the lower layer. The patterns define at least one opening. A sacrificial layer is formed in the opening and the mask is removed. The sacrificial layer in the opening is partially etched when the mask is removed.
Public/Granted literature
- US20110207285A1 Method Of Forming Pattern Structure And Method Of Fabricating Semiconductor Device Using The Same Public/Granted day:2011-08-25
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