Method of manufacturing semiconductor device

Invention Grant

US08481429B2 Method of manufacturing semiconductor device 有权

Title translation: 制造半导体器件的方法

Please log in to see more content

Patent Title: Method of manufacturing semiconductor device
Patent Title (中): 制造半导体器件的方法
Application No.: US13347531

Application Date: 2012-01-10
Publication No.: US08481429B2

Publication Date: 2013-07-09
Inventor: Jae Heon Kim , Cheol Kyu Bok
Applicant: Jae Heon Kim , Cheol Kyu Bok
Applicant Address: KR Icheon
Assignee: Hynix Semiconductor Inc.
Current Assignee: Hynix Semiconductor Inc.
Current Assignee Address: KR Icheon
Priority: KR10-2011-0044743 20110512
Main IPC: H01L21/3105
IPC: H01L21/3105

Method of manufacturing semiconductor device

Abstract:

A method of manufacturing a semiconductor device is provided. According to an embodiment, the method includes forming a layer to be etched on a semiconductor substrate, and forming a photoresist pattern on the layer to be etched. A block copolymer including a hydrophobic radical and a hydrophilic radical is formed in the photoresist pattern, and the block copolymer is assembled to allow a polymer having the hydrophobic radical to be formed in a pillar pattern within a polymer having the hydrophilic radical. The polymer having the hydrophobic radical is then selectively removed.

Abstract(Chinese):

提供一种制造半导体器件的方法。根据实施例，该方法包括在半导体衬底上形成待蚀刻的层，并在待蚀刻的层上形成光刻胶图案。在光致抗蚀剂图案中形成包括疏水基团和亲水基团的嵌段共聚物，并且组合嵌段共聚物以允许具有疏水基团的聚合物以具有亲水基团的聚合物中的柱状图案形成。然后选择性地除去具有疏水基团的聚合物。

Public/Granted literature

US20120289051A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-11-15

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理