Invention Grant
US08481431B2 Method for opening one-side contact region of vertical transistor and method for fabricating one-side junction region using the same
有权
用于开放垂直晶体管的单面接触区域的方法及使用该方法制造单面接合区域的方法
- Patent Title: Method for opening one-side contact region of vertical transistor and method for fabricating one-side junction region using the same
- Patent Title (中): 用于开放垂直晶体管的单面接触区域的方法及使用该方法制造单面接合区域的方法
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Application No.: US13161846Application Date: 2011-06-16
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Publication No.: US08481431B2Publication Date: 2013-07-09
- Inventor: Kyong Bong Rouh , Yong Seok Eun , Eun Shil Park
- Applicant: Kyong Bong Rouh , Yong Seok Eun , Eun Shil Park
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0013456 20110215
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A method for opening a one-side contact region of a vertical transistor is provided. The one-side contact region of the vertical transistor is opened using a polysilicon layer, a certain portion of which can be selectively removed by a selective ion implantation process. In order to selectively remove the polysilicon layer formed on one of both sides of an active region, at which the one-side contact is to be formed, impurity ion implantation is performed in a direction vertical to the polysilicon layer by a plasma doping process, and a tilt ion implantation using an existing ion implantation process is performed. In this manner, the polysilicon layer is selectively doped, and the undoped portion of the polysilicon layer is selectively removed.
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