Invention Grant
- Patent Title: Method of manufacturing a semiconductor device and processing apparatus
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Application No.: US12216596Application Date: 2008-07-08
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Publication No.: US08481434B2Publication Date: 2013-07-09
- Inventor: Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
- Applicant: Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-298552 20071116
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.
Public/Granted literature
- US20090130860A1 Method of manufacturing a semiconductor device and processing apparatus Public/Granted day:2009-05-21
Information query
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