Invention Grant
- Patent Title: Resist copolymers containing photoacid generators for lithographic applications and its method of preparation
- Patent Title (中): 含有光刻产生剂的抗蚀剂共聚物及其制备方法
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Application No.: US12312231Application Date: 2009-02-11
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Publication No.: US08481663B2Publication Date: 2013-07-09
- Inventor: Haiwon Lee , Meehye Jeong , Ashok D. Sagar
- Applicant: Haiwon Lee , Meehye Jeong , Ashok D. Sagar
- Applicant Address: KR Seoul
- Assignee: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Current Assignee: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Current Assignee Address: KR Seoul
- Agency: Christie, Parker & Hale, LLP
- Priority: KR10-2008-0080543 20080818
- International Application: PCT/KR2009/000628 WO 20090211
- International Announcement: WO2010/021442 WO 20100225
- Main IPC: C08F12/30
- IPC: C08F12/30
Abstract:
Disclosed is a copolymer suitable for use as a resist for atomic force microscope (AFM) lithography or e-beam lithography. The copolymer contains fluoroalkylsulfonium salts as photoacid generators. The copolymer has high solubility in organic solvents and high coating ability. In addition, the copolymer can be patterned with high sensitivity and resolution by lithography. Further disclosed is a method of preparation for the copolymer.
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