Invention Grant
US08481785B2 Materials for N-doping the electron-transporting layers in organic electronic components 有权
用于在有机电子部件中N掺杂电子传输层的材料

Materials for N-doping the electron-transporting layers in organic electronic components
Abstract:
The invention pertains to new materials based on sterically inhibited donor arylboranes for the improvement of electron injection and electron transport in organic electronic components like organic light-emitting diodes (OLED's), organic field effect transistors (OFET's), and on organic photovoltaics based components, in particular, organic solar cells.
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