Invention Grant
- Patent Title: Ion source, ion beam processing/observation apparatus, charged particle beam apparatus, and method for observing cross section of sample
- Patent Title (中): 离子源,离子束处理/观察装置,带电粒子束装置和观察样品截面的方法
-
Application No.: US12108037Application Date: 2008-04-23
-
Publication No.: US08481980B2Publication Date: 2013-07-09
- Inventor: Hiroyasu Shichi , Satoshi Tomimatsu , Kaoru Umemura , Noriyuki Kaneoka , Koji Ishiguro
- Applicant: Hiroyasu Shichi , Satoshi Tomimatsu , Kaoru Umemura , Noriyuki Kaneoka , Koji Ishiguro
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2007-113358 20070423; JP2007-161691 20070619
- Main IPC: G21K5/10
- IPC: G21K5/10

Abstract:
An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.
Public/Granted literature
Information query