Invention Grant
- Patent Title: Semiconductor composite film, method for forming semiconductor composite film, thin film transistor, method for manufacturing thin film transistor, and electronic apparatus
- Patent Title (中): 半导体复合膜，半导体复合膜的形成方法，薄膜晶体管，薄膜晶体管的制造方法以及电子设备
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Application No.: US12502606Application Date: 2009-07-14
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Publication No.: US08481993B2Publication Date: 2013-07-09
- Inventor: Noriyuki Kawashima , Takahiro Ohe
- Applicant: Noriyuki Kawashima , Takahiro Ohe
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2008-190602 20080724
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L51/00 ; H01L23/58 ; H01L23/48 ; H01L29/40
Abstract:
A semiconductor composite film includes a semiconductor thin film layer containing an organic semiconductor material, an insulating thin film layer formed from a polymer material phase-separated from the organic semiconductor material in the film thickness direction, and a fine particle material dispersed in at least one of the semiconductor thin film layer and the insulating thin film layer.
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