Provided is a hydrogen penetration barrier for preventing hydrogen from being diffused and discharged through a barrier and preventing hydrogen embrittlement of a material due to diffusion of hydrogen ions into a material. In detail, the hydrogen penetration barrier prevents penetration of hydrogen ions by using a built-in potential of a semiconductor layer doped with a p-type impurity and a semiconductor layer doped with an n-type impurity and a potential applied by a reverse biased voltage and includes an absorption layer absorbing the hydrogen molecules to primarily prevent the penetration of the hydrogen molecules and uses the absorption layer made of the conductive material as an application electrode of the reverse biased voltage and ionizes the hydrogen absorbed to the absorption layer to secondarily prevent the penetration of the hydrogen molecules and prevent the hydrogen embrittlement.