Invention Grant
US08482000B2 Molecular element, manufacturing method thereof, integrated circuit device, manufacturing method thereof, three-dimensional integrated circuit device, and manufacturing method thereof 失效
分子元件及其制造方法,集成电路器件,其制造方法,三维集成电路器件及其制造方法

  • Patent Title: Molecular element, manufacturing method thereof, integrated circuit device, manufacturing method thereof, three-dimensional integrated circuit device, and manufacturing method thereof
  • Patent Title (中): 分子元件及其制造方法,集成电路器件,其制造方法,三维集成电路器件及其制造方法
  • Application No.: US13119674
    Application Date: 2009-09-01
  • Publication No.: US08482000B2
    Publication Date: 2013-07-09
  • Inventor: Eriko Matsui
  • Applicant: Eriko Matsui
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: K&L Gates, LLP
  • Priority: JP2008-240288 20080919
  • International Application: PCT/JP2009/065250 WO 20090901
  • International Announcement: WO2010/032608 WO 20100325
  • Main IPC: H01L27/28
  • IPC: H01L27/28
Molecular element, manufacturing method thereof, integrated circuit device, manufacturing method thereof, three-dimensional integrated circuit device, and manufacturing method thereof
Abstract:
In one example embodiment, a molecular element is configured by bridging a gap between a source electrode and a drain electrode by a functional molecule. The functional molecule arises from covalent linkage of a side chain composed of a pendant molecule that has dielectric constant anisotropy and/or dipole moments and in which orientation change occurs due to an electric field to a main chain composed of a conjugated molecule in which structural change occurs due to the orientation change of the pendant molecule and an electrical characteristic changes. The molecular element is made to work as a diode, a transistor, or a memory by an electric field applied to the pendant molecule of the functional molecule by gate electrodes.
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