Invention Grant
- Patent Title: Semiconductor device
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Application No.: US12976582Application Date: 2010-12-22
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Publication No.: US08482001B2Publication Date: 2013-07-09
- Inventor: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
- Applicant: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-296201 20091225
- Main IPC: H01L27/12
- IPC: H01L27/12

Abstract:
An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.
Public/Granted literature
- US20110156117A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-06-30
Information query
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