It is an object to provide a light-emitting device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the light-emitting device with high productivity. As for a light-emitting device including an inverted staggered thin film transistor of a channel stop type, the inverted staggered thin film transistor includes a gate electrode, a gate insulating film over the gate electrode, a microcrystalline semiconductor film including a channel formation region over the gate insulating film, a buffer layer over the microcrystalline semiconductor film, a channel protective layer which is provided over the buffer layer so as to overlap with the channel formation region of the microcrystalline semiconductor film, a source region and a drain region over the channel protective layer and the buffer layer, and a source electrode and a drain electrode over the source region and the drain region.