Invention Grant
- Patent Title: Semiconductor light-emitting device and manufacturing method
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US13396591Application Date: 2012-02-14
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Publication No.: US08482016B2Publication Date: 2013-07-09
- Inventor: Mitsunori Harada
- Applicant: Mitsunori Harada
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kenealy Vaidya LLP
- Priority: JP2011-028841 20110214
- Main IPC: H01L33/08
- IPC: H01L33/08

Abstract:
A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, the wavelength converting layer located between an optical plate and the chip so as to extend from the optical plate toward the chip, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the optical plate.
Public/Granted literature
- US20120211774A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD Public/Granted day:2012-08-23
Information query
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