Invention Grant
- Patent Title: Light emitting device and method for manufacturing same
- Patent Title (中): 发光装置及其制造方法
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Application No.: US12364567Application Date: 2009-02-03
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Publication No.: US08482024B2Publication Date: 2013-07-09
- Inventor: Chisato Furukawa , Takafumi Nakamura
- Applicant: Chisato Furukawa , Takafumi Nakamura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2008-137945 20080527
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A light emitting device includes a light emitting layer made of semiconductor; an upper electrode including a bonding electrode capable of connecting a wire thereto and a thin-wire electrode surrounding the bonding electrode with a spacing and including a junction with the bonding electrode, and a current diffusion layer provided between the light emitting layer and the upper electrode and made of semiconductor, the current diffusion layer including a recess that is formed in a non-forming region of the upper electrode and capable of emitting light emitted from the light emitting layer.
Public/Granted literature
- US20090294795A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2009-12-03
Information query
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