Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13545553Application Date: 2012-07-10
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Publication No.: US08482038B2Publication Date: 2013-07-09
- Inventor: Takayuki Sasaki , Yasuto Igarashi , Naozumi Morino
- Applicant: Takayuki Sasaki , Yasuto Igarashi , Naozumi Morino
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2006-57146 20060303
- Main IPC: H01L27/118
- IPC: H01L27/118

Abstract:
A technique which reduces the influence of external noise such as crosstalk noise in a semiconductor device to prevent a circuit from malfunctioning. A true signal wire and a bar signal wire which are susceptible to noise and part of an input signal line to a level shifter circuit, and shield wires for shielding these signal wires are laid on an I/O cell. Such I/O cells are placed side by side to complete a true signal wire connection and a bar signal wire connection. These wires are arranged in a way to pass over a plurality of I/O cells and are parallel to each other or multilayered.
Public/Granted literature
- US20120280741A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-11-08
Information query
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