Invention Grant
- Patent Title: Solid-state image capturing device, method of manufacturing solid-state image capturing device, method of driving solid-state image capturing device, and electronic apparatus
- Patent Title (中): 固体摄像装置,固体摄像装置的制造方法,固态摄像装置的驱动方法以及电子装置
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Application No.: US12695328Application Date: 2010-01-28
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Publication No.: US08482040B2Publication Date: 2013-07-09
- Inventor: Hideo Kanbe
- Applicant: Hideo Kanbe
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2009-025347 20090205
- Main IPC: H01L27/148
- IPC: H01L27/148

Abstract:
A solid-state image capturing device includes: a substrate; a substrate voltage source which applies a first potential to the substrate during a light reception period and applies a second potential to the substrate during a non-light reception period; and a plurality of pixels which each includes a light receiver which is formed on a front surface of the substrate and generates signal charges in accordance with received light, a storage capacitor which is formed adjacent to the light receiver and accumulates and stores signal charges generated by the light receiver, dark-current suppressors which are formed in the light receiver and the storage capacitor, an electronic shutter adjusting layer which is formed in an area facing the light receiver in the substrate and distant from the storage capacitor and which adjusts potential distribution, and a floating diffusion portion to which the signal charges accumulated in the storage capacitor are transmitted.
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Information query
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