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US08482051B2 3D nonvolatile memory device including a plurality of channel contacts coupled to a plurality of channel layers and a plurality of section lines coupled to the plurality of channel contacts and method for fabricating the same 有权
3D非易失性存储器件包括耦合到多个沟道层的多个沟道触点和耦合到多个沟道触点的多个选择线及其制造方法

  • Patent Title: 3D nonvolatile memory device including a plurality of channel contacts coupled to a plurality of channel layers and a plurality of section lines coupled to the plurality of channel contacts and method for fabricating the same
  • Patent Title (中): 3D非易失性存储器件包括耦合到多个沟道层的多个沟道触点和耦合到多个沟道触点的多个选择线及其制造方法
  • Application No.: US12974397
    Application Date: 2010-12-21
  • Publication No.: US08482051B2
    Publication Date: 2013-07-09
  • Inventor: Se-Yun Lim , Eun-Seok Choi
  • Applicant: Se-Yun Lim , Eun-Seok Choi
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2010-0002254 20100111; KR10-2010-0041448 20100503
  • Main IPC: H01L29/78
  • IPC: H01L29/78
3D nonvolatile memory device including a plurality of channel contacts coupled to a plurality of channel layers and a plurality of section lines coupled to the plurality of channel contacts and method for fabricating the same
Abstract:
A 3D nonvolatile memory device includes a plurality of channel structures each comprising a plurality of channel layers and interlayer dielectric layers which are alternately stacked, a plurality of channel contacts coupled to the plurality of channel layers, respectively, and a plurality of selection lines vertically-coupled to the plurality of channel contacts and crossing over the plurality of channel structures.
Abstract(Chinese):

3D非易失性存储器件包括多个沟道结构，每个沟道结构包括交替层叠的多个沟道层和层间电介质层，分别耦合到多个沟道层的多个沟道触点，以及多个选择线， 耦合到所述多个通道触点并跨过所述多个通道结构。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
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