Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13238422Application Date: 2011-09-21
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Publication No.: US08482054B2Publication Date: 2013-07-09
- Inventor: Takeshi Sakaguchi
- Applicant: Takeshi Sakaguchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-212799 20100922
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
According to one embodiment, there is provided a semiconductor memory device including an element region, a first gate insulating film, a charge accumulation layer, a second gate insulating film, and a control gate electrode. The charge accumulation layer covers the first gate insulating film. The second gate insulating film has a first portion and a second portion. The first portion covers an upper surface of the charge accumulation layer when a side of a surface on which the element region of the semiconductor substrate is demarcated is an upper side. The second portion covers a side surface of the charge accumulation layer. The control gate electrode covers the upper surface and the side surface of the charge accumulation layer via the second gate insulating film. A breakdown voltage of the first portion is higher than a breakdown voltage of the second portion.
Public/Granted literature
- US20120068257A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-03-22
Information query
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