Invention Grant
- Patent Title: Non-volatile memory device and method for fabricating the same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US13304901Application Date: 2011-11-28
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Publication No.: US08482055B2Publication Date: 2013-07-09
- Inventor: Eun-Seok Choi , Hyun-Seung Yoo
- Applicant: Eun-Seok Choi , Hyun-Seung Yoo
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0140482 20101231
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/336 ; H01L29/78
Abstract:
A non-volatile memory device includes a substrate including a resistor layer having a resistance lower than that of a source line, channel structures including a plurality of inter-layer dielectric layers that are alternately staked with a plurality of channel layers over the substrate, and the source line configured to contact sidewalls of the channel layers, where a lower end of the source line contacts the resistor layer.
Public/Granted literature
- US20120168849A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-07-05
Information query
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