Invention Grant
- Patent Title: Semiconductor device having a floating semiconductor zone
- Patent Title (中): 具有浮动半导体区的半导体器件
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Application No.: US13610240Application Date: 2012-09-11
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Publication No.: US08482062B2Publication Date: 2013-07-09
- Inventor: Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
- Applicant: Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
Public/Granted literature
- US20130001640A1 SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE Public/Granted day:2013-01-03
Information query
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