Invention Grant
- Patent Title: Integrated circuit diode
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Application No.: US13104542Application Date: 2011-05-10
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Publication No.: US08482078B2Publication Date: 2013-07-09
- Inventor: Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- Applicant: Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/70
- IPC: H01L21/70

Abstract:
A method includes forming isolation regions in a semiconductor substrate to define a first field effect transistor (FET) region, a second FET region, and a diode region, forming a first gate stack in the first FET region and a second gate stack in the second FET region, forming a layer of spacer material over the second FET region and the second gate stack, forming a first source region and a first drain region in the first FET region and a first diode layer in the diode region using a first epitaxial growth process, forming a hardmask layer over the first source region, the first drain region, the first gate stack and a portion of the first diode layer, and forming a second source region and a second drain region in the first FET region and a second diode layer on the first diode layer using a second epitaxial growth process.
Public/Granted literature
- US20120286364A1 Integrated Circuit Diode Public/Granted day:2012-11-15
Information query
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