Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13161031Application Date: 2011-06-15
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Publication No.: US08482079B2Publication Date: 2013-07-09
- Inventor: Chun-Fai Cheng , Li-Ping Huang , Ka-Hing Fung
- Applicant: Chun-Fai Cheng , Li-Ping Huang , Ka-Hing Fung
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119

Abstract:
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed device comprises a gate structure over a substrate and defining a channel region in the substrate, an epitaxial feature with a first dopant in the substrate, and an epitaxial source/drain feature with a second dopant in the substrate. The epitaxial source/drain feature is farther from the channel region than the epitaxial feature is. The second dopant has an electrical carrier type opposite to the first dopant.
Public/Granted literature
- US20120319203A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-12-20
Information query
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