Invention Grant
US08482079B2 Semiconductor device and method of manufacturing the same 有权
半导体装置及其制造方法

Semiconductor device and method of manufacturing the same
Abstract:
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed device comprises a gate structure over a substrate and defining a channel region in the substrate, an epitaxial feature with a first dopant in the substrate, and an epitaxial source/drain feature with a second dopant in the substrate. The epitaxial source/drain feature is farther from the channel region than the epitaxial feature is. The second dopant has an electrical carrier type opposite to the first dopant.
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