Invention Grant
- Patent Title: Poly-resistor, and linear amplifier
- Patent Title (中): 聚电阻和线性放大器
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Application No.: US12933208Application Date: 2008-04-11
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Publication No.: US08482099B2Publication Date: 2013-07-09
- Inventor: Jerome Enjalbert
- Applicant: Jerome Enjalbert
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- International Application: PCT/IB2008/053125 WO 20080411
- International Announcement: WO2009/125256 WO 20091015
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
The present invention provides a poly-resistor with an improved linearity. Majority charge carrier wells are provided under the poly-strips and are biased in such way that the non-linearity of the resistor is reduced. Further, when such poly-resistors are used in amplifier circuits, the gain of the amplifier remains constant against the poly-depletion effect.
Public/Granted literature
- US20110018678A1 POLY-RESISTOR, AND LINEAR AMPLIFIER Public/Granted day:2011-01-27
Information query
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