Invention Grant
- Patent Title: Wafer-scale X-ray detector and method of manufacturing the same
- Patent Title (中): 晶圆级X射线检测器及其制造方法
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Application No.: US13109435Application Date: 2011-05-17
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Publication No.: US08482108B2Publication Date: 2013-07-09
- Inventor: Jae-chul Park , Chang-jung Kim , Sang-wook Kim , Sun-il Kim
- Applicant: Jae-chul Park , Chang-jung Kim , Sang-wook Kim , Sun-il Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0126356 20101210
- Main IPC: H01L31/115
- IPC: H01L31/115

Abstract:
A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit substrate; a chip array having a plurality of pixel pads formed on a central region thereof and a plurality of pin pads formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes formed to correspond to the pixel pads; vertical wirings and horizontal wirings formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer and a common electrode which cover the pixel electrodes on the redistribution layer.
Public/Granted literature
- US20120146016A1 Wafer-Scale X-Ray Detector And Method Of Manufacturing The Same Public/Granted day:2012-06-14
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