A semiconductor device includes at least one first component (5) (for example, a first integrated circuit), having a front face provided with electrical connection pads. The first component is embedded in a support layer (2) is a position such that the front face of the first component is not covered and lies parallel to a first face of the support layer. An intermediate layer (8) is formed on the front face of the first component and on the first face of the support layer. An electrical connection network (9) within the intermediate layer selectively connects to the electrical connection pads of the first component. The device further includes at least one second component (11) (for example, a second integrate circuit, having one face placed above the intermediate layer and provided with electrical connection pads selectively connected to the electrical connection network. Electrical connection vias (17) pass through the support layer and selectively connect the electrical connection network to an external electrical connection formed on a second face of the support layer.